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IAUC41N06S5N102ATMA1
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IAUC41N06S5N102ATMA1

Infineon Technologies

Product No:

IAUC41N06S5N102ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-33

Datasheet:

-

Description:

MOSFET_)40V 60V) PG-TDSON-8

Quantity:

Delivery:

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Payment:

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In Stock : 12276

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.485856

    $0.485856

  • 10

    $0.425124

    $4.25124

  • 50

    $0.364392

    $18.2196

  • 100

    $0.334026

    $33.4026

  • 500

    $0.318843

    $159.4215

  • 1000

    $0.30366

    $303.66

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1112.1 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 16.3 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 10.2mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.4V @ 13µA
Supplier Device Package PG-TDSON-8-33
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 42W (Tc)
Series Automotive, AEC-Q101, OptiMOS™-5
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 47A (Tj)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Package Tape & Reel (TR)