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IAUCN04S7N004ATMA1
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IAUCN04S7N004ATMA1

Infineon Technologies

Product No:

IAUCN04S7N004ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-53

Datasheet:

-

Description:

MOSFET_(20V 40V)

Quantity:

Delivery:

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Payment:

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In Stock : 130

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.78731

    $1.78731

  • 10

    $1.608579

    $16.08579

  • 50

    $1.429848

    $71.4924

  • 100

    $1.251117

    $125.1117

  • 500

    $1.215371

    $607.6855

  • 1000

    $1.19154

    $1191.54

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 11310 pF @ 20 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 169 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 0.44mOhm @ 88A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 130µA
Supplier Device Package PG-TDSON-8-53
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 219W (Tc)
Series Automotive, AEC-Q101, OptiMOS™ 7
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 175A
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Package Tape & Reel (TR)