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IAUS200N08S5N023ATMA1
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IAUS200N08S5N023ATMA1

Infineon Technologies

Product No:

IAUS200N08S5N023ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-HSOG-8-1

Datasheet:

pdf

Description:

MOSFET N-CH 80V 200A HSOG-8

Quantity:

Delivery:

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Payment:

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In Stock : 235

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.496847

    $2.496847

  • 10

    $2.247163

    $22.47163

  • 50

    $1.997478

    $99.8739

  • 100

    $1.747793

    $174.7793

  • 500

    $1.697856

    $848.928

  • 1000

    $1.664565

    $1664.565

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 7670 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.3mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 130µA
Supplier Device Package PG-HSOG-8-1
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 200W (Tc)
Series Automotive, AEC-Q101, OptiMOS™
Package / Case 8-PowerSMD, Gull Wing
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number IAUS200