IAUT200N08S5N023ATMA1

Infineon Technologies

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PG-HSOF-8-1

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MOSFET N-CH 80V 200A 8HSOF

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	7670 pF @ 40 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.3mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.8V @ 130µA
Supplier Device Package	PG-HSOF-8-1
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	200W (Tc)
Series	OptiMOS™-5
Package / Case	8-PowerSFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	IAUT200