Home / Single FETs, MOSFETs / IAUTN12S5N018GATMA1
IAUTN12S5N018GATMA1
detaildesc

IAUTN12S5N018GATMA1

Infineon Technologies

Product No:

IAUTN12S5N018GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-HSOG-8-1

Datasheet:

-

Description:

MOSFET_(120V 300V)

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 717

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.56605

    $5.56605

  • 10

    $5.009445

    $50.09445

  • 50

    $4.45284

    $222.642

  • 100

    $3.896235

    $389.6235

  • 500

    $3.784914

    $1892.457

  • 1000

    $3.7107

    $3710.7

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C
FET Feature -
FET Type N-Channel
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs -
Product Status Active
Vgs(th) (Max) @ Id -
Supplier Device Package PG-HSOG-8-1
Drain to Source Voltage (Vdss) 120 V
Power Dissipation (Max) -
Series OptiMOS™5
Package / Case 8-PowerSMD, Gull Wing
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C -
Mfr Infineon Technologies
Vgs (Max) -
Drive Voltage (Max Rds On, Min Rds On) -
Package Tape & Reel (TR)