IAUZ40N06S5L050ATMA1

Infineon Technologies

Product No:

Manufacturer:

Package:

PG-TSDSON-8-33

Datasheet:

Description:

MOSFET_)40V 60V) PG-TSDSON-8

Quantity:

Delivery:

Payment:

In Stock : 1984

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2500 pF @ 30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36.7 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 29µA
Supplier Device Package	PG-TSDSON-8-33
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	71W (Tc)
Series	Automotive, AEC-Q101, OptiMOS™-5
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	90A (Tj)
Mfr	Infineon Technologies
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)