IAUZ40N06S5N050ATMA1

Infineon Technologies

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PG-TSDSON-8-33

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Description:

MOSFET N-CH 60V 40A TSDSON-8-33

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2200 pF @ 30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30.5 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.4V @ 29µA
Supplier Device Package	PG-TSDSON-8-33
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	71W (Tc)
Series	OptiMOS™-5
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	40A (Tj)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Package	Tape & Reel (TR)
Base Product Number	IAUZ40