IDW10G65C5XKSA1
Infineon Technologies
Product No:
IDW10G65C5XKSA1
Manufacturer:
Package:
PG-TO247-3
Datasheet:
-
Description:
DIODE SIL CARB 650V 10A TO247-3
Quantity:
Delivery:
Payment:
In Stock : 117
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.575
$1.575
10
$1.4175
$14.175
50
$1.26
$63
100
$1.1025
$110.25
500
$1.071
$535.5
1000
$1.05
$1050
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Speed | No Recovery Time > 500mA (Io) |
| Capacitance @ Vr, F | 300pF @ 1V, 1MHz |
| Reverse Recovery Time (trr) | 0 ns |
| Mounting Type | Through Hole |
| Product Status | Active |
| Supplier Device Package | PG-TO247-3 |
| Current - Reverse Leakage @ Vr | 180 µA @ 650 V |
| Series | CoolSiC™+ |
| Package / Case | TO-247-3 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Mfr | Infineon Technologies |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Bulk |
| Current - Average Rectified (Io) | 10A |
| Operating Temperature - Junction | -55°C ~ 175°C |
IDW10G65C5XKSA1 Related Blog
2000+Daily average RFQ Volume
300,000Standard Product Unit
280+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
Feedback