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IMBF170R650M1XTMA1
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IMBF170R650M1XTMA1

Infineon Technologies

Product No:

IMBF170R650M1XTMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7-13

Datasheet:

-

Description:

SICFET N-CH 1700V 7.4A TO263-7

Quantity:

Delivery:

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In Stock : 1097

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.586432

    $3.586432

  • 10

    $3.227789

    $32.27789

  • 50

    $2.869146

    $143.4573

  • 100

    $2.510503

    $251.0503

  • 500

    $2.438774

    $1219.387

  • 1000

    $2.390955

    $2390.955

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 422 pF @ 1000 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 12 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 650mOhm @ 1.5A, 15V
Product Status Active
Vgs(th) (Max) @ Id 5.7V @ 1.7mA
Supplier Device Package PG-TO263-7-13
Drain to Source Voltage (Vdss) 1700 V
Power Dissipation (Max) 88W (Tc)
Series CoolSiC™
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 7.4A (Tc)
Mfr Infineon Technologies
Vgs (Max) +20V, -10V
Drive Voltage (Max Rds On, Min Rds On) 12V, 15V
Package Tape & Reel (TR)
Base Product Number IMBF170