
Infineon Technologies
Product No:
IMBG120R060M1HXTMA1
Manufacturer:
Package:
PG-TO263-7-12
Datasheet:
-
Description:
SICFET N-CH 1.2KV 36A TO263
Quantity:
Delivery:

Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$7.159478
$7.159478
10
$6.44353
$64.4353
50
$5.727582
$286.3791
100
$5.011634
$501.1634
500
$4.868445
$2434.2225
1000
$4.772985
$4772.985
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| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | Standard |
| Input Capacitance (Ciss) (Max) @ Vds | 1145 pF @ 800 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 18 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 83mOhm @ 13A, 18V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.7V @ 5.6mA |
| Supplier Device Package | PG-TO263-7-12 |
| Drain to Source Voltage (Vdss) | 1200 V |
| Power Dissipation (Max) | 181W (Tc) |
| Series | CoolSiC™ |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | +18V, -15V |
| Package | Tape & Reel (TR) |
| Base Product Number | IMBG120 |