IMBG65R022M1HXTMA1

Infineon Technologies

Product No:

IMBG65R022M1HXTMA1

Manufacturer:

Package:

PG-TO263-7-12

Datasheet:

Description:

SILICON CARBIDE MOSFET PG-TO263-

Quantity:

Delivery:

Payment:

In Stock : 1008

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2288 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	67 nC @ 18 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	30mOhm @ 41.1A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5.7V @ 12.3mA
Supplier Device Package	PG-TO263-7-12
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	300W (Tc)
Series	CoolSiC™
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	64A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	+23V, -5V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tape & Reel (TR)
Base Product Number	IMBG65