IMT65R022M1HXUMA1
Infineon Technologies
Product No:
IMT65R022M1HXUMA1
Manufacturer:
Package:
PG-HSOF-8-1
Datasheet:
-
Description:
SILICON CARBIDE MOSFET
Quantity:
Delivery:
Payment:
In Stock : 424
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$12.929647
$12.929647
10
$11.636683
$116.36683
50
$10.343718
$517.1859
100
$9.050753
$905.0753
500
$8.79216
$4396.08
1000
$8.619765
$8619.765
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Operating Temperature | - |
| FET Feature | - |
| FET Type | - |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | - |
| Product Status | Active |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | PG-HSOF-8-1 |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | - |
| Series | CoolSiC™ |
| Package / Case | 8-PowerSFN |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | - |
| Mfr | Infineon Technologies |
| Vgs (Max) | - |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Package | Tape & Reel (TR) |
IMT65R022M1HXUMA1 Related Blog
2000+Daily average RFQ Volume
300,000Standard Product Unit
280+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
Feedback