IMW120R020M1HXKSA1
Infineon Technologies
Product No:
IMW120R020M1HXKSA1
Manufacturer:
Package:
PG-TO247-3
Datasheet:
-
Description:
SIC DISCRETE
Quantity:
Delivery:
Payment:
In Stock : 38
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$19.33596
$19.33596
10
$17.402364
$174.02364
50
$15.468768
$773.4384
100
$13.535172
$1353.5172
500
$13.148453
$6574.2265
1000
$12.89064
$12890.64
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 3460 nF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 18 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 26.9mOhm @ 41A, 18V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.2V @ 17.6mA |
| Supplier Device Package | PG-TO247-3 |
| Drain to Source Voltage (Vdss) | 1200 V |
| Power Dissipation (Max) | 375W (Tc) |
| Series | CoolSiC™ |
| Package / Case | TO-247-3 |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 98A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | +20V, -5V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Package | Tube |
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