IMW65R027M1HXKSA1
Infineon Technologies
Product No:
IMW65R027M1HXKSA1
Manufacturer:
Package:
PG-TO247-3-41
Datasheet:
-
Description:
MOSFET 650V NCH SIC TRENCH
Quantity:
Delivery:
Payment:
In Stock : 287
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.575
$1.575
10
$1.4175
$14.175
50
$1.26
$63
100
$1.1025
$110.25
500
$1.071
$535.5
1000
$1.05
$1050
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2131 pF @ 400 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 18 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 38.3A, 18V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.7V @ 11mA |
| Supplier Device Package | PG-TO247-3-41 |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 189W (Tc) |
| Series | CoolSIC™ M1 |
| Package / Case | TO-247-3 |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | +23V, -5V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Package | Tube |
| Base Product Number | IMW65R027 |
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