IMW65R030M1HXKSA1
detaildesc

IMW65R030M1HXKSA1

Infineon Technologies

Product No:

IMW65R030M1HXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-3-41

Datasheet:

-

Description:

SILICON CARBIDE MOSFET, PG-TO247

Quantity:

Delivery:

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Payment:

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In Stock : 164

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $10.491705

    $10.491705

  • 10

    $9.442535

    $94.42535

  • 50

    $8.393364

    $419.6682

  • 100

    $7.344194

    $734.4194

  • 500

    $7.134359

    $3567.1795

  • 1000

    $6.99447

    $6994.47

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1643 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 18 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 42mOhm @ 29.5A, 18V
Product Status Active
Vgs(th) (Max) @ Id 5.7V @ 8.8mA
Supplier Device Package PG-TO247-3-41
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 197W (Tc)
Series CoolSiC™
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 58A (Tc)
Mfr Infineon Technologies
Vgs (Max) +20V, -2V
Drive Voltage (Max Rds On, Min Rds On) 18V
Package Tube
Base Product Number IMW65R