IMYH200R100M1HXKSA1
Infineon Technologies
Product No:
IMYH200R100M1HXKSA1
Manufacturer:
Package:
PG-TO247-4-U04
Datasheet:
-
Description:
SIC DISCRETE
Quantity:
Delivery:
Payment:
In Stock : 172
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$15.20757
$15.20757
10
$13.686813
$136.86813
50
$12.166056
$608.3028
100
$10.645299
$1064.5299
500
$10.341148
$5170.574
1000
$10.13838
$10138.38
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 18 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 131mOhm @ 10A, 18V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.5V @ 6mA |
| Supplier Device Package | PG-TO247-4-U04 |
| Drain to Source Voltage (Vdss) | 2000 V |
| Power Dissipation (Max) | 217W (Tc) |
| Series | CoolSiC™ |
| Package / Case | TO-247-4 |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | +20V, -7V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Package | Tube |
| Base Product Number | IMYH200 |
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