
Infineon Technologies
Product No:
IPB016N06L3GATMA1
Manufacturer:
Package:
PG-TO263-7
Datasheet:
-
Description:
MOSFET N-CH 60V 180A TO263-7
Quantity:
Delivery:

Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.709472
$2.709472
10
$2.438525
$24.38525
50
$2.167578
$108.3789
100
$1.896631
$189.6631
500
$1.842441
$921.2205
1000
$1.806315
$1806.315
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| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 28000 pF @ 30 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 166 nC @ 4.5 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 100A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.2V @ 196µA |
| Supplier Device Package | PG-TO263-7 |
| Drain to Source Voltage (Vdss) | 60 V |
| Power Dissipation (Max) | 250W (Tc) |
| Series | OptiMOS™ |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | IPB016 |