
Infineon Technologies
Product No:
IPB017N10N5LFATMA1
Manufacturer:
Package:
PG-TO263-7
Datasheet:
-
Description:
MOSFET N-CH 100V 180A TO263-7
Quantity:
Delivery:

Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$5.401956
$5.401956
10
$4.86176
$48.6176
50
$4.321565
$216.07825
100
$3.781369
$378.1369
500
$3.67333
$1836.665
1000
$3.601304
$3601.304
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| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 840 pF @ 50 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 100A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.1V @ 270µA |
| Supplier Device Package | PG-TO263-7 |
| Drain to Source Voltage (Vdss) | 100 V |
| Power Dissipation (Max) | 313W (Tc) |
| Series | OptiMOS™-5 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | IPB017 |