IPB030N08N3GATMA1
detaildesc

IPB030N08N3GATMA1

Infineon Technologies

Product No:

IPB030N08N3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7

Datasheet:

-

Description:

MOSFET N-CH 80V 160A TO263-7

Quantity:

Delivery:

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Payment:

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In Stock : 1863

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.7783

    $2.7783

  • 10

    $2.50047

    $25.0047

  • 50

    $2.22264

    $111.132

  • 100

    $1.94481

    $194.481

  • 500

    $1.889244

    $944.622

  • 1000

    $1.8522

    $1852.2

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 8110 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 155µA
Supplier Device Package PG-TO263-7
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 214W (Tc)
Series OptiMOS™
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 160A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number IPB030