
Infineon Technologies
Product No:
IPB038N12N3GATMA1
Manufacturer:
Package:
PG-TO263-3
Datasheet:
-
Description:
MOSFET N-CH 120V 120A D2PAK
Quantity:
Delivery:

Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.45744
$3.45744
10
$3.111696
$31.11696
50
$2.765952
$138.2976
100
$2.420208
$242.0208
500
$2.351059
$1175.5295
1000
$2.30496
$2304.96
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| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 13800 pF @ 60 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 211 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 100A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Supplier Device Package | PG-TO263-3 |
| Drain to Source Voltage (Vdss) | 120 V |
| Power Dissipation (Max) | 300W (Tc) |
| Series | OptiMOS™ |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | IPB038 |