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IPB048N15N5LFATMA1
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IPB048N15N5LFATMA1

Infineon Technologies

Product No:

IPB048N15N5LFATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Datasheet:

-

Description:

MOSFET N-CH 150V 120A D2PAK

Quantity:

Delivery:

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Payment:

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In Stock : 689

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $7.037887

    $7.037887

  • 10

    $6.334099

    $63.34099

  • 50

    $5.63031

    $281.5155

  • 100

    $4.926521

    $492.6521

  • 500

    $4.785763

    $2392.8815

  • 1000

    $4.691925

    $4691.925

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 75 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.8mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.9V @ 255µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 150 V
Power Dissipation (Max) 313W (Tc)
Series OptiMOS™-5
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPB048