IPB072N15N3GATMA1
detaildesc

IPB072N15N3GATMA1

Infineon Technologies

Product No:

IPB072N15N3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Datasheet:

-

Description:

MOSFET N-CH 150V 100A TO263-3

Quantity:

Delivery:

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Payment:

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In Stock : 1281

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.179056

    $1.179056

  • 10

    $1.061151

    $10.61151

  • 50

    $0.943245

    $47.16225

  • 100

    $0.825339

    $82.5339

  • 500

    $0.801758

    $400.879

  • 1000

    $0.786037

    $786.037

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5470 pF @ 75 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 93 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 7.2mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 270µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 150 V
Power Dissipation (Max) 300W (Tc)
Series OptiMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Package Tape & Reel (TR)
Base Product Number IPB072