IPB080N03L G
Infineon Technologies
Product No:
IPB080N03L G
Manufacturer:
Package:
PG-TO263-3-2
Datasheet:
-
Description:
N-CHANNEL POWER MOSFET
Quantity:
Delivery:
Payment:
In Stock : 818
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.67725
$0.67725
10
$0.609525
$6.09525
50
$0.5418
$27.09
100
$0.474075
$47.4075
500
$0.46053
$230.265
1000
$0.4515
$451.5
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 15 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 30A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drain to Source Voltage (Vdss) | 30 V |
| Power Dissipation (Max) | 47W (Tc) |
| Series | OptiMOS™3 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 50A |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Bulk |
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