IPB65R420CFD
detaildesc

IPB65R420CFD

Infineon Technologies

Product No:

IPB65R420CFD

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 1291

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.27575

    $1.27575

  • 10

    $1.148175

    $11.48175

  • 50

    $1.0206

    $51.03

  • 100

    $0.893025

    $89.3025

  • 500

    $0.86751

    $433.755

  • 1000

    $0.8505

    $850.5

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 31.5 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 420mOhm @ 3.4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 300µA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 83.3W (Tc)
Series CoolMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 8.7A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk