Home / Single FETs, MOSFETs / IPD023N04NF2SATMA1
IPD023N04NF2SATMA1
detaildesc

IPD023N04NF2SATMA1

Infineon Technologies

Product No:

IPD023N04NF2SATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Datasheet:

-

Description:

TRENCH <= 40V

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 1429

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.736942

    $0.736942

  • 10

    $0.663248

    $6.63248

  • 50

    $0.589554

    $29.4777

  • 100

    $0.51586

    $51.586

  • 500

    $0.501121

    $250.5605

  • 1000

    $0.491295

    $491.295

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 20 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.3mOhm @ 70A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.4V @ 81µA
Supplier Device Package PG-TO252-3
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 3W (Ta), 150W (Tc)
Series StrongIRFET™2
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 143A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number IPD023