IPD30N06S223ATMA2
detaildesc

IPD30N06S223ATMA2

Infineon Technologies

Product No:

IPD30N06S223ATMA2

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Datasheet:

-

Description:

MOSFET N-CH 55V 30A TO252-31

Quantity:

Delivery:

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Payment:

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In Stock : 1516

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.687015

    $0.687015

  • 10

    $0.618314

    $6.18314

  • 50

    $0.549612

    $27.4806

  • 100

    $0.480911

    $48.0911

  • 500

    $0.46717

    $233.585

  • 1000

    $0.45801

    $458.01

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 901 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 23mOhm @ 21A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 50µA
Supplier Device Package PG-TO252-3-11
Drain to Source Voltage (Vdss) 55 V
Power Dissipation (Max) 100W (Tc)
Series OptiMOS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPD30N06