Infineon Technologies
Product No:
IPD50P03P4L11ATMA2
Manufacturer:
Package:
PG-TO252-3-11
Datasheet:
-
Description:
MOSFET P-CH 30V 50A TO252-31
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.660408
$0.660408
10
$0.577857
$5.77857
50
$0.495306
$24.7653
100
$0.454031
$45.4031
500
$0.433393
$216.6965
1000
$0.412755
$412.755
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 3770 pF @ 25 V |
FET Type | P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 10.5mOhm @ 50A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 2V @ 85µA |
Supplier Device Package | PG-TO252-3-11 |
Drain to Source Voltage (Vdss) | 30 V |
Power Dissipation (Max) | 58W (Tc) |
Series | Automotive, AEC-Q101, OptiMOS®-P2 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | +5V, -16V |
Package | Tape & Reel (TR) |
Base Product Number | IPD50 |