IPD600N25N3GATMA1
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IPD600N25N3GATMA1

Infineon Technologies

Product No:

IPD600N25N3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Datasheet:

-

Description:

MOSFET N-CH 250V 25A TO252-3

Quantity:

Delivery:

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Payment:

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In Stock : 3178

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.775025

    $1.775025

  • 10

    $1.597522

    $15.97522

  • 50

    $1.42002

    $71.001

  • 100

    $1.242517

    $124.2517

  • 500

    $1.207017

    $603.5085

  • 1000

    $1.18335

    $1183.35

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2350 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 60mOhm @ 25A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 90µA
Supplier Device Package PG-TO252-3
Drain to Source Voltage (Vdss) 250 V
Power Dissipation (Max) 136W (Tc)
Series OptiMOS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPD600