Infineon Technologies
Product No:
IPD60R1K5CEATMA1
Manufacturer:
Package:
PG-TO252-3
Datasheet:
-
Description:
MOSFET N-CH 600V 3.1A TO252-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.870975
$0.870975
10
$0.783878
$7.83878
50
$0.69678
$34.839
100
$0.609683
$60.9683
500
$0.592263
$296.1315
1000
$0.58065
$580.65
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Operating Temperature | -40°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 100 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 10V |
Product Status | Discontinued at Digi-Key |
Vgs(th) (Max) @ Id | 3.5V @ 90µA |
Supplier Device Package | PG-TO252-3 |
Drain to Source Voltage (Vdss) | 600 V |
Power Dissipation (Max) | 28W (Tc) |
Series | CoolMOS™ CE |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPD60R |