Infineon Technologies
Product No:
IPD80R2K7C3AATMA1
Manufacturer:
Package:
D-Pak
Datasheet:
-
Description:
MOSFET N-CH TO252-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.879795
$0.879795
10
$0.791816
$7.91816
50
$0.703836
$35.1918
100
$0.615857
$61.5857
500
$0.598261
$299.1305
1000
$0.58653
$586.53
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Operating Temperature | -40°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 100 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 2.7Ohm @ 1.2A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.9V @ 250µA |
Supplier Device Package | D-Pak |
Drain to Source Voltage (Vdss) | 800 V |
Power Dissipation (Max) | 42W (Tc) |
Series | Automotive, AEC-Q101, CoolMOS™ |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPD80R2 |