IPD900P06NMATMA1
detaildesc

IPD900P06NMATMA1

Infineon Technologies

Product No:

IPD900P06NMATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-313

Datasheet:

-

Description:

MOSFET P-CH 60V 16.4A TO252

Quantity:

Delivery:

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Payment:

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In Stock : 6058

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.52332

    $0.52332

  • 10

    $0.457905

    $4.57905

  • 50

    $0.39249

    $19.6245

  • 100

    $0.359783

    $35.9783

  • 500

    $0.343429

    $171.7145

  • 1000

    $0.327075

    $327.075

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 30 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 90mOhm @ 16.4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 710µA
Supplier Device Package PG-TO252-3-313
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 63W (Tc)
Series OptiMOS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 16.4A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPD90