Infineon Technologies
Product No:
IPD95R750P7ATMA1
Manufacturer:
Package:
PG-TO252-3
Datasheet:
-
Description:
MOSFET N-CH 950V 9A TO252-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.120455
$1.120455
10
$1.008409
$10.08409
50
$0.896364
$44.8182
100
$0.784319
$78.4319
500
$0.761909
$380.9545
1000
$0.74697
$746.97
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 712 pF @ 400 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 750mOhm @ 4.5A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.5V @ 220µA |
Supplier Device Package | PG-TO252-3 |
Drain to Source Voltage (Vdss) | 950 V |
Power Dissipation (Max) | 73W (Tc) |
Series | CoolMOS™ P7 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPD95R750 |