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IPF013N04NF2SATMA1
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IPF013N04NF2SATMA1

Infineon Technologies

Product No:

IPF013N04NF2SATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7-U02

Datasheet:

-

Description:

TRENCH <= 40V

Quantity:

Delivery:

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Payment:

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In Stock : 431

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.750298

    $1.750298

  • 10

    $1.575268

    $15.75268

  • 50

    $1.400238

    $70.0119

  • 100

    $1.225208

    $122.5208

  • 500

    $1.190202

    $595.101

  • 1000

    $1.166865

    $1166.865

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 7500 pF @ 20 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 159 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.35mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.4V @ 126µA
Supplier Device Package PG-TO263-7-U02
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 3.8W (Ta), 188W (Tc)
Series StrongIRFET™2
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 40A (Ta), 232A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number IPF013