IPI045N10N3GXKSA1
detaildesc

IPI045N10N3GXKSA1

Infineon Technologies

Product No:

IPI045N10N3GXKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3

Datasheet:

-

Description:

MOSFET N-CH 100V 100A TO262-3

Quantity:

Delivery:

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Payment:

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In Stock : 491

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.258235

    $2.258235

  • 10

    $2.032411

    $20.32411

  • 50

    $1.806588

    $90.3294

  • 100

    $1.580764

    $158.0764

  • 500

    $1.5356

    $767.8

  • 1000

    $1.50549

    $1505.49

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 8410 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 4.5mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 150µA
Supplier Device Package PG-TO262-3
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 214W (Tc)
Series OptiMOS™
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tube
Base Product Number IPI045