IPI076N12N3GAKSA1
Infineon Technologies
Product No:
IPI076N12N3GAKSA1
Manufacturer:
Package:
PG-TO262-3
Datasheet:
-
Description:
MOSFET N-CH 120V 100A TO262-3
Quantity:
Delivery:
Payment:
In Stock : 404
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.04057
$2.04057
10
$1.836513
$18.36513
50
$1.632456
$81.6228
100
$1.428399
$142.8399
500
$1.387588
$693.794
1000
$1.36038
$1360.38
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 6640 pF @ 60 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 101 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 7.6mOhm @ 100A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 130µA |
| Supplier Device Package | PG-TO262-3 |
| Drain to Source Voltage (Vdss) | 120 V |
| Power Dissipation (Max) | 188W (Tc) |
| Series | OptiMOS™ |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | IPI076 |
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