Infineon Technologies
Product No:
IPI60R199CPXKSA2
Manufacturer:
Package:
PG-TO262-3-1
Description:
HIGH POWER_LEGACY
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.429753
$2.429753
10
$2.186777
$21.86777
50
$1.943802
$97.1901
100
$1.700827
$170.0827
500
$1.652232
$826.116
1000
$1.619835
$1619.835
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 1520 pF @ 100 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 199mOhm @ 9.9A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.5V @ 660µA |
Supplier Device Package | PG-TO262-3-1 |
Drain to Source Voltage (Vdss) | 600 V |
Power Dissipation (Max) | 139W (Tc) |
Series | CoolMOS® |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tube |
Base Product Number | IPI60R199 |