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IPI70N12S3L12AKSA1
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IPI70N12S3L12AKSA1

Infineon Technologies

Product No:

IPI70N12S3L12AKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3-1

Datasheet:

pdf

Description:

MOSFET N-CHANNEL_100+

Quantity:

Delivery:

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In Stock : 12141

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.4805

    $1.4805

  • 10

    $1.33245

    $13.3245

  • 50

    $1.1844

    $59.22

  • 100

    $1.03635

    $103.635

  • 500

    $1.00674

    $503.37

  • 1000

    $0.987

    $987

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5550 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 77 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 12.1mOhm @ 70A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.4V @ 83µA
Supplier Device Package PG-TO262-3-1
Drain to Source Voltage (Vdss) 120 V
Power Dissipation (Max) 125W (Tc)
Series Automotive, AEC-Q101, OptiMOS™
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tube
Base Product Number IPI70N