Infineon Technologies
Product No:
IPI80N06S2L05AKSA2
Manufacturer:
Package:
PG-TO262-3-1
Description:
MOSFET N-CH 55V 80A TO262-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.00825
$3.00825
10
$2.707425
$27.07425
50
$2.4066
$120.33
100
$2.105775
$210.5775
500
$2.04561
$1022.805
1000
$2.0055
$2005.5
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 25 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 4.8mOhm @ 80A, 10V |
Product Status | Obsolete |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Supplier Device Package | PG-TO262-3-1 |
Drain to Source Voltage (Vdss) | 55 V |
Power Dissipation (Max) | 300W (Tc) |
Series | OptiMOS™ |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tube |
Base Product Number | IPI80N |