IPI80N06S2L11AKSA2
Infineon Technologies
Product No:
IPI80N06S2L11AKSA2
Manufacturer:
Package:
PG-TO262-3-1
Datasheet:
Description:
MOSFET N-CH 55V 80A TO262-3
Quantity:
Delivery:
Payment:
In Stock : 29865
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.512
$1.512
10
$1.3608
$13.608
50
$1.2096
$60.48
100
$1.0584
$105.84
500
$1.02816
$514.08
1000
$1.008
$1008
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2075 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 10.7mOhm @ 40A, 10V |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 2V @ 93µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drain to Source Voltage (Vdss) | 55 V |
| Power Dissipation (Max) | 158W (Tc) |
| Series | OptiMOS™ |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | IPI80N |
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