IPN50R950CEATMA1
Infineon Technologies
Product No:
IPN50R950CEATMA1
Manufacturer:
Package:
PG-SOT223
Datasheet:
-
Description:
MOSFET N-CH 500V 6.6A SOT223
Quantity:
Delivery:
Payment:
In Stock : 1000
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.267216
$0.267216
10
$0.233814
$2.33814
50
$0.200412
$10.0206
100
$0.183711
$18.3711
500
$0.175361
$87.6805
1000
$0.16701
$167.01
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Product Information
Parameter Info
User Guide
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 231 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 1.2A, 13V |
| Product Status | Not For New Designs |
| Vgs(th) (Max) @ Id | 3.5V @ 100µA |
| Supplier Device Package | PG-SOT223 |
| Drain to Source Voltage (Vdss) | 500 V |
| Power Dissipation (Max) | 5W (Tc) |
| Series | CoolMOS™ CE |
| Package / Case | TO-261-4, TO-261AA |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Package | Tape & Reel (TR) |
| Base Product Number | IPN50R950 |
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