IPN60R1K0CEATMA1
Infineon Technologies
Product No:
IPN60R1K0CEATMA1
Manufacturer:
Package:
PG-SOT223-3
Datasheet:
-
Description:
MOSFET N-CH 600V 6.8A SOT223
Quantity:
Delivery:
Payment:
In Stock : 12889
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.322896
$0.322896
10
$0.282534
$2.82534
50
$0.242172
$12.1086
100
$0.221991
$22.1991
500
$0.2119
$105.95
1000
$0.20181
$201.81
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Product Information
Parameter Info
User Guide
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Supplier Device Package | PG-SOT223-3 |
| Drain to Source Voltage (Vdss) | 600 V |
| Power Dissipation (Max) | 5W (Tc) |
| Series | CoolMOS™ CE |
| Package / Case | TO-261-4, TO-261AA |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | IPN60R1 |
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