Infineon Technologies
Product No:
IPN60R3K4CEATMA1
Manufacturer:
Package:
PG-SOT223-3
Datasheet:
-
Description:
MOSFET N-CH 600V 2.6A SOT223
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.222096
$0.222096
10
$0.194334
$1.94334
50
$0.166572
$8.3286
100
$0.152691
$15.2691
500
$0.145751
$72.8755
1000
$0.13881
$138.81
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Operating Temperature | -40°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 93 pF @ 100 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 3.4Ohm @ 500mA, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.5V @ 40µA |
Supplier Device Package | PG-SOT223-3 |
Drain to Source Voltage (Vdss) | 600 V |
Power Dissipation (Max) | 5W (Tc) |
Series | CoolMOS™ CE |
Package / Case | TO-261-4, TO-261AA |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 2.6A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPN60R3 |