Infineon Technologies
Product No:
IPN95R1K2P7ATMA1
Manufacturer:
Package:
PG-SOT223
Datasheet:
-
Description:
MOSFET N-CH 950V 6A SOT223
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.698198
$0.698198
10
$0.628378
$6.28378
50
$0.558558
$27.9279
100
$0.488738
$48.8738
500
$0.474774
$237.387
1000
$0.465465
$465.465
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 478 pF @ 400 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.7A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.5V @ 140µA |
Supplier Device Package | PG-SOT223 |
Drain to Source Voltage (Vdss) | 950 V |
Power Dissipation (Max) | 7W (Tc) |
Series | CoolMOS™ P7 |
Package / Case | TO-261-4, TO-261AA |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPN95R1 |