IPP023N10N5XKSA1

Infineon Technologies

Product No:

IPP023N10N5XKSA1

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Package:

PG-TO220-3-1

Datasheet:

Description:

TRENCH >=100V

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	15600 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	210 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.3mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.8V @ 270µA
Supplier Device Package	PG-TO220-3-1
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	375W (Tc)
Series	OptiMOS™ 5
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tube