IPP023NE7N3G
detaildesc

IPP023NE7N3G

Infineon Technologies

Product No:

IPP023NE7N3G

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3

Datasheet:

pdf

Description:

MOSFET N-CH 75V 120A TO220-3

Quantity:

Delivery:

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Payment:

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In Stock : 1250

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.05

    $4.05

  • 10

    $3.645

    $36.45

  • 50

    $3.24

    $162

  • 100

    $2.835

    $283.5

  • 500

    $2.754

    $1377

  • 1000

    $2.7

    $2700

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 14400 pF @ 37.5 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 206 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 2.3mOhm @ 100A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 3.8V @ 273µA
Supplier Device Package PG-TO220-3
Drain to Source Voltage (Vdss) 75 V
Power Dissipation (Max) 300W (Tc)
Series OptiMOS™ 3
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPP023N