IPP100N08N3GXKSA1

Infineon Technologies

Product No:

IPP100N08N3GXKSA1

Manufacturer:

Package:

PG-TO220-3

Datasheet:

Description:

MOSFET N-CH 80V 70A TO220-3

Quantity:

Delivery:

Payment:

In Stock : 231

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2410 pF @ 40 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	10mOhm @ 46A, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	3.5V @ 46µA
Supplier Device Package	PG-TO220-3
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	100W (Tc)
Series	OptiMOS™
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tube
Base Product Number	IPP100