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IPP120P04P4L03AKSA2
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IPP120P04P4L03AKSA2

Infineon Technologies

Product No:

IPP120P04P4L03AKSA2

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3-1

Datasheet:

pdf

Description:

MOSFET_(20V,40V)

Quantity:

Delivery:

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Payment:

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In Stock : 100

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.546428

    $3.546428

  • 10

    $3.191785

    $31.91785

  • 50

    $2.837142

    $141.8571

  • 100

    $2.482499

    $248.2499

  • 500

    $2.411571

    $1205.7855

  • 1000

    $2.364285

    $2364.285

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 15000 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 234 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 3.4mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 340µA
Supplier Device Package PG-TO220-3-1
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 136W (Tc)
Series OptiMOS®-P2
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Mfr Infineon Technologies
Vgs (Max) +5V, -16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk