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IPP60R170CFD7XKSA1
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IPP60R170CFD7XKSA1

Infineon Technologies

Product No:

IPP60R170CFD7XKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3

Datasheet:

-

Description:

MOSFET N-CH 650V 14A TO220-3

Quantity:

Delivery:

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Payment:

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In Stock : 60

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.832828

    $1.832828

  • 10

    $1.649545

    $16.49545

  • 50

    $1.466262

    $73.3131

  • 100

    $1.282979

    $128.2979

  • 500

    $1.246323

    $623.1615

  • 1000

    $1.221885

    $1221.885

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1199 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 170mOhm @ 6A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 300µA
Supplier Device Package PG-TO220-3
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 75W (Tc)
Series CoolMOS™ CFD7
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPP60R170