IPU95R3K7P7AKMA1
detaildesc

IPU95R3K7P7AKMA1

Infineon Technologies

Product No:

IPU95R3K7P7AKMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO251-3

Datasheet:

-

Description:

MOSFET N-CH 950V 2A TO251-3

Quantity:

Delivery:

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Payment:

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In Stock : 171

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.602784

    $0.602784

  • 10

    $0.527436

    $5.27436

  • 50

    $0.452088

    $22.6044

  • 100

    $0.414414

    $41.4414

  • 500

    $0.395577

    $197.7885

  • 1000

    $0.37674

    $376.74

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 196 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 3.7Ohm @ 800mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 40µA
Supplier Device Package PG-TO251-3
Drain to Source Voltage (Vdss) 950 V
Power Dissipation (Max) 22W (Tc)
Series CoolMOS™ P7
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPU95R3