IQE013N04LM6CGSCATMA1

Infineon Technologies

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PG-WHTFN-9-1

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OPTIMOS LOWVOLTAGE POWER MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3800 pF @ 20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	41 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.35mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 51µA
Supplier Device Package	PG-WHTFN-9-1
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	2.5W (Ta), 107W (Tc)
Series	OptiMOS™ 6
Package / Case	9-PowerWDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	31A (Ta), 205A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)